The Effect of Dielectric Friction on the Rate of Charge Separation in Type Ii Znse/Cds Semiconductor Nanorods

Author(s)

Alexander N. Tarnovsky, Bowling Green State UniversityFollow
Nishshanka N. Hewa-Kasakarage
Patrick Z. El-Khoury
Nickolas Schmall
Maria Kirsanova
Alexander Nemchinov
Alexey Bezryadin
Mikhail Zamkov

Document Type

Article

Abstract

The effect of dielectric friction on the rate of charge separation in type II ZnSe/CdS semiconductor nanorods has been investigated using picosecond transient absorption spectroscopy. The spatial separation of an excited electron-hole pair was estimated from the redshift in band edge absorption corresponding to the decrease in the exciton binding energy. The present study identifies a considerable effect of the solvent polarity on the rate of charge separation in semiconductor heterostructures, which should be taken into account when selecting nanorod caging media, such as solvents or polymer matrices. © 2009 American Institute of Physics.

Copyright Statement

Publisher PDF

Repository Citation

Tarnovsky, Alexander N.; Hewa-Kasakarage, Nishshanka N.; El-Khoury, Patrick Z.; Schmall, Nickolas; Kirsanova, Maria; Nemchinov, Alexander; Bezryadin, Alexey; and Zamkov, Mikhail, "The Effect of Dielectric Friction on the Rate of Charge Separation in Type Ii Znse/Cds Semiconductor Nanorods" (2009). Chemistry Faculty Publications. 34.
https://scholarworks.bgsu.edu/chem_pub/34

Publication Date

2009

Publication Title

Applied Physics Letters

Publisher

American Institute of Physics

DOI

https://doi.org/10.1063/1.3114464